Experimental evaluation of medium-voltage cascode gallium nitride (GaN) devices for bidirectional DC-DC converters
نویسندگان
چکیده
Wide bandgap (WBG) semiconductors, such as silicon carbide (SiC) and gallium nitride (GaN), exhibit superior physical properties demonstrate great potential for replacing conventional (Si) semiconductors with WBG technology, pushing the boundaries of power devices to handle higher blocking voltages, switching frequencies, output levels, operating temperatures. However, tradeoffs in performance converter efficiency when substituting GaN Si SiC counterparts are not well-defined, especially a cascode configuration. Additional research further detailed investigation analysis is necessitated medium-voltage applications. Therefore, aim this experimentally investigate impact emerging 650/900 V on bidirectional dc-dc converters that suitable energy storage distributed renewable systems. Dynamic characteristics Si, SiC, examined through double-pulse test (DPT) circuit at different gate resistance values, device currents, DC bus voltages. Furthermore, behavior loss well rate voltage current changes over time studied analyzed various conditions. A 500 W experimental prototype implemented validate benefits operation performance. Comprehensive losses improvements Si-based, SiC-based, GaN-based performed evaluated frequency, working temperature, level in-creased. The results reveal significant from converters.
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ژورنال
عنوان ژورنال: CES transactions on electrical machines and systems
سال: 2021
ISSN: ['2096-3564']
DOI: https://doi.org/10.30941/cestems.2021.000227